2009. 11. 17 1/4 semiconductor technical data 2N7000A n channel enhancement mode field effect transistor revision no : 3 interface and switching application. features ? high density cell design for low r ds(on) . ? voltage controolled small signal switch. ? rugged and reliable. ? high saturation current capablity. maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. source 2. gate 3. drain + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =48v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =15v, v ds =0v - - 1 a gate-body leakage, reverse i gssr v gs =-15v, v ds =0v - - -1 a characteristic symbol rating unit drain-source voltage v dss 60 v drain-gate voltage (r gs ?a 1 ? ) v dgr 60 v gate-source voltage v gss ?? 20 v drain current continuous i d 200 ma pulsed i dp 500 drain power dissipation p d 400 mw junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit
2009. 11. 17 2/4 2N7000A revision no : 3 electrical characteristics (ta=25 ? ) on characteristics (note 1) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =1ma 0.8 2.1 3 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - 1.2 5 ? v gs =4.5v, i d =75ma - 1.8 5.3 drain-source on voltage v ds(on) v gs =10v, i d =500ma - 0.6 2.5 v v gs =4.5v, i d =75ma - 0.14 0.4 on state drain current i d(on) v gs =4.5v, v ds =10v 75 600 - ma forward transconductance g fs v ds =10v, i d =200ma 100 320 - ms drain-source diode forward voltage v sd v gs =0v, i s =200ma - 0.76 1.15 v dynamic characteristics characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 20 50 pf reverse transfer capacitance c rss - 4 5 output capacitance c oss - 11 25 switching time turn-on time t on v dd =15v, r l =25 ? , i d =200ma, v gs =10v, r gen =25 ? - - 10 ns turn-off time t off - - 10 out output, v 10% 10% 10% 90% 90% 90% 50% 50% f t r t in input, v inverted pulse width d(on) t d(off) t on t off t switching time test circuit gs v gen r v dd r l v out dut d g s in v note 1) pulse test : pulse width z 300 ? , duty cycle z 2.0%
2009. 11. 17 3/4 2N7000A revision no : 3 drain-source voltage v (v) drain current i (a) d 0 ds 0 i - v dds 1 common source ta=25 c v =3v gs 2345 0.5 1.0 1.5 2.0 4v 5v 6v 8v 7v 9v 10v gate-source voltage v (v) drain current i (a) d gs i - v dgs 0 0.5 0.4 common source ta=25 c 7v 6v 5v 4.5v 4v v =10v gs 0.8 1.2 1.6 2.0 1.5 1.0 2.0 2.5 3.0 9v 8v 0 0 2 common source ta=- 55 c v =10v gs 46810 0.8 0.4 1.2 1.6 2.0 ta=25 c t a=125 c drain source on- resistance r ( ?) ( normalized) drain current i (a) d ds(on) r - i ds(on) d 0 0 0.4 common source ta=125 c v =10v gs 0.8 1.2 1.6 2.0 1.0 0.5 1.5 2.0 3.0 2.5 ta=25 c ta=-55 c drain source on- resistance r ( ?) ( normalized) drain current i (a) d ds(on) r - i ds(on) d -50 0.5 -25 common source i =500ma d v =10v gs 0255075100125150 1.0 0.75 1.25 1.5 2.0 1.75 drain source on- resistance r ( ?) ( normalized) junction temperature t ( c) j ds(on) r - t ds(on) j -50 0.8 -25 common source v =v ds gs i =1ma d 0255075100125150 0.9 0.85 0.95 1.0 1.1 1.05 junction temperature t ( c) j v - t th j normalized gate source threshold voltage vth (v)
2009. 11. 17 4/4 2N7000A revision no : 3 body diode forward voltage v (v) reverse drain current i (a) s sd i - v ssd 0.01 0.2 0.03 0.1 0.3 1 3 10 common source v =0 gs 30 ta=-55 c 0.4 0.6 0.8 1.0 1.2 1.4 ta=25 c ta=125 c common source ta=25 c f=1mhz v =0 drain-source voltage v (v) capacitance c (pf) 110 5 330 c - v gs ds 50 ds c rss oss c c iss 1 5 3 10 50 30 100 gate charge q (nc) gate-source voltage v (v) gs g v - q gs g 0 0 0.4 common source v =25v ds i =115ma d 0.8 1.2 1.6 2.0 4 2 6 8 10 i - v ds drain-source voltage v (v) drain current i (a) dds d 1310 100 30 5 single pulse ta=25 c gs v =10v 100 s 1ms 10ms 100ms 1s 10 s dc ds(on) r limit 50 2 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 p - ta d ambient temperature ta ( c) 02040 100 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 200 300 400 500 600 700
|
